Thin-film SOI technology: the solution to many submicron CMOS problems
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 817-820
- https://doi.org/10.1109/iedm.1989.74178
Abstract
The performances of thin-film SOI (silicon-on-insulator) MOSFETs and CMOS circuits are presented. Attention is given to the SOI material, device properties, and design and processing. It is noted that this technology is extremely attractive for deep-submicron applications because of such properties as improved subthreshold slope, reduced short-channel effects, reduced electric fields, increased transconductance, and better immunity to soft errors. Front-end CMOS processing of thin films of SOI is also considerably simpler than bulk device processing. The competitiveness of TFSOI technology on the CMOS market is discussed.<>Keywords
This publication has 15 references indexed in Scilit:
- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Porous silicon: The material and its applications to SOI technologiesMicroelectronic Engineering, 1988
- CMOS devices and circuits made in lamp-ZMR SOI filmsMicroelectronic Engineering, 1988
- Thin-film SOI devices: A perspectiveMicroelectronic Engineering, 1988
- Formation of silicon-on-insulator layers by electron beam recrystallizationMicroelectronic Engineering, 1988
- Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistorsIEEE Electron Device Letters, 1988
- Observation of mobility enhancement in ultrathin SOI MOSFETsElectronics Letters, 1988
- Thin-film, accumulation-mode p -channel SOI MOSFETsElectronics Letters, 1988
- High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxyIEEE Electron Device Letters, 1987
- Buried Oxide Soi: Materials, Devices, and VLSI CircuitsMRS Proceedings, 1987