Neutral-Impurity Scattering Experiments in Silicon with Highly Spin-Polarized Electrons
- 25 July 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 17 (4) , 188-190
- https://doi.org/10.1103/physrevlett.17.188
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.17.188Keywords
This publication has 5 references indexed in Scilit:
- Neutral-Impurity Scattering and Impurity Zeeman Spectroscopy in Semiconductors Using Highly Spin-Polarized CarriersPhysical Review Letters, 1966
- Multiphonon Processes in the Photoconductivity of InSbPhysical Review Letters, 1964
- Electron Paramagnetic Resonance Apparatus Operating at Liquid He3 TemperaturesReview of Scientific Instruments, 1962
- Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impuritiesJournal of Physics and Chemistry of Solids, 1961
- Electron Spin-Lattice Relaxation in Phosphorus-Doped SiliconPhysical Review B, 1960