Exciton self-trapping in ZnSe-ZnTe alloys
- 6 April 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (14) , 1475-1478
- https://doi.org/10.1103/physrevlett.58.1475
Abstract
The low-intensity luminescence of with x=1% exhibits several unusual features which are attributed to the occurrence of efficient exciton self-trapping induced by Te atoms. This type of exciton localization is strikingly different from that observed in other II-VI or III-V mixed crystals.
Keywords
This publication has 12 references indexed in Scilit:
- Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas SuperlatticesPhysical Review Letters, 1986
- Localized and delocalized two-dimensional excitons in GaAs-AlGaAs multiple-quantum-well structuresPhysical Review B, 1984
- Subnanosecond spectroscopy of disorder-localized excitons in CdPhysical Review B, 1983
- Localized Excitons in CdS1−xSex Solid SolutionsPhysica Status Solidi (b), 1982
- Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorPhysical Review B, 1982
- Evidence for Exciton Localization by Alloy Fluctuations in Indirect-GapPhysical Review Letters, 1980
- Self-Trapping in Mixed Crystal –Clustering, Dimensionality, Percolation–Journal of the Physics Society Japan, 1979
- Impurity-Induced Self-Trapping of Holes and Minority-Ion Percolation in TlCl–TlBr Mixed CrystalsJournal of the Physics Society Japan, 1978
- Excitons in AgBr1-æClæ - transition of relaxed state between free and self-traffed excitonSolid State Communications, 1971
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958