Evidence for Exciton Localization by Alloy Fluctuations in Indirect-Gap
- 21 April 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (16) , 1087-1090
- https://doi.org/10.1103/physrevlett.44.1087
Abstract
This paper reports a new photoluminescence (PL) band in indirect that lies between donor-bound and free exciton PL peaks. It has relatively strong -point phonon sidebands and an asymmetric shape with an abrupt high-energy cutoff. The lifetime varies rapidly over the PL linewidth. Properties of excitons in fluctuating random-alloy potentials are discussed. It is suggested that this line is due to excitons trapped by such potentials.
Keywords
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