Statistics for a Semiconductor with an InSb-Type Valence Band
- 15 March 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 167 (3) , 761-764
- https://doi.org/10.1103/physrev.167.761
Abstract
InSb is a semiconductor which has a linear term in its highest-lying valence-band energy-wave-vector relationship, with the net result that the valence band has an extremum at a position other than at . The effect of the linear term on the hole density, density-of-states mass, conductivity, and conductivity mass has been calculated. Each of these quantities has been evaluated by a series expansion in the extremum energy and is accurate to approximately 0.3%. Both the hole density and the density-of-states mass have a shallow maximum followed by a rapid decrease as the magnitude of the reduced extremum energy is increased. The conductivity and conductivity mass are qualitatively the same. When the calculations are applied to InSb, it is found that the linear term is important only at low temperatures. This conclusion is consistent with the experimentally determined band parameters.
Keywords
This publication has 5 references indexed in Scilit:
- Evidence from Cyclotron-Resonance Measurements for Spin-Degeneracy Splitting of the Valence Band of InSb NearPhysical Review Letters, 1966
- Interband Magneto-Absorption and Faraday Rotation in InSbPhysical Review B, 1966
- Cyclotron resonance in p-type InSb at millimetre wavelengthsPhysics Letters, 1963
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955