Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 700-704
- https://doi.org/10.1016/s0169-4332(97)80167-5
Abstract
No abstract availableKeywords
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- Monolayer-scale optical investigation of segregation effects in semiconductor heterostructuresPhysical Review B, 1992
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