Effects of deep localized-state distribution on photoconductive properties in amorphous silicon
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 385-388
- https://doi.org/10.1016/0022-3093(83)90601-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Estimation of localized state distribution profiles in undoped and doped a-Si:H by measuring space-charge-limited currentSolid State Communications, 1982
- Effect of recombination on transient photoconductivity in-Si: HPhysical Review B, 1982
- The density of states in amorphous silicon determined by space-charge-limited current measurementsPhilosophical Magazine Part B, 1982
- Thermalization and recombination in amorphous semiconductorsSolid State Communications, 1981
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981