Degradation and breakdown of silicon dioxide films on silicon
- 9 November 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (19) , 2329-2331
- https://doi.org/10.1063/1.108233
Abstract
Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.Keywords
This publication has 12 references indexed in Scilit:
- Impact ionization and positive charge formation in silicon dioxide films on siliconApplied Physics Letters, 1992
- Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxidePhysical Review B, 1992
- Hot-electron dynamics instudied by soft-x-ray-induced core-level photoemissionPhysical Review B, 1991
- Impact ionization in the presence of strong electric fields in silicon dioxideRadiation Effects and Defects in Solids, 1991
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- Direct measurement of the energy distribution of hot electrons in silicon dioxideJournal of Applied Physics, 1985
- Theory of high-field electron transport in silicon dioxidePhysical Review B, 1985
- Electron heating in silicon dioxide and off-stoichiometric silicon dioxide filmsJournal of Applied Physics, 1985
- Breakdown in silicon oxide−A reviewJournal of Vacuum Science and Technology, 1977
- Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2Applied Physics Letters, 1977