Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2
- 1 June 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (11) , 601-603
- https://doi.org/10.1063/1.89252
Abstract
Films of thermal SiO2 in the thickness range 30−300 Å were stressed at fields approaching breakdown. Intrinsic breakdown was observed to be preceded by generation of a very high density of electron traps. These traps must be energetically located at least 4 eV below the SiO2 conduction band and may be assocated with broaken Si‐O bonds. The ultimate breakdown strength of ultrathin films was found to be (2.8±0.4) ×107 V/cm. The present work suggests a new mechanism to explain intrinsic breakdown in films of thermal SiO2.Keywords
This publication has 5 references indexed in Scilit:
- Electroluminescence at high fields in silicon dioxideJournal of Applied Physics, 1976
- Capture and emission of electrons at 2.4-eV-deep trap level in SifilmsPhysical Review B, 1975
- Impact ionization model for dielectric instability and breakdownApplied Physics Letters, 1974
- Theory of High Field Conduction in a DielectricJournal of Applied Physics, 1969
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965