Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (11) , 466-468
- https://doi.org/10.1109/55.334669
Abstract
We derived a simple formula for the subthreshold swing S in double-gate (DG) SOI MOSFET's. Our formula, which depends only on a scaling device parameter, matches the device simulation results. From these results, our equations are simple and give a scaling rule for DG-SOI MOSFET's.Keywords
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