Optical absorptivity of ion-beam irradiated silicon
- 1 January 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 45 (1) , 69-72
- https://doi.org/10.1007/bf00618765
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Absorption edge and internal electric fields in amorphous semiconductorsPublished by Elsevier ,2003
- Ionographic patterns with amorphous/crystalline contrastApplied Physics A, 1987
- Optical recording in amorphous silicon filmsJournal of Applied Physics, 1982
- The crystalline-to-amorphous transition in ion-bombarded siliconPhilosophical Magazine Part B, 1980
- Optical constants of rf sputtered hydrogenated amorphous SiPhysical Review B, 1979
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Optical Constants of Epitaxial Silicon in the Region 1–3.3 eVPhysica Scripta, 1975
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970