Optical constants of rf sputtered hydrogenated amorphous Si
- 15 July 1979
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 20 (2) , 716-728
- https://doi.org/10.1103/physrevb.20.716
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976
- Electronic Structure of Amorphous Si from Photoemission and Optical StudiesPhysical Review B, 1972
- The fundamental absorption of amorphous Ge, Si and GeSi alloysJournal of Non-Crystalline Solids, 1970
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955