A mathematical analysis for the peak of the conduction characteristic of formed MIM devices
- 1 May 1985
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 4 (5) , 513-516
- https://doi.org/10.1007/bf00720020
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Invited paper A critical review of the observed electrical properties of MIM devices showing VCNRInternational Journal of Electronics, 1984
- The effects of filamentary conduction through uniform and flawed filaments in insulators and semiconductorsJournal of Non-Crystalline Solids, 1983
- Relationship of the current-voltage characteristics to the distribution of filament resistances in electroformed MIM structuresThin Solid Films, 1979
- Metal-insulator-metal sandwich structures with anomalous propertiesVacuum, 1976
- A theory for negative resistance and memory effects in thin insulating films and its application to Au-ZnS-Au devicesJournal of Physics D: Applied Physics, 1971
- Electrical phenomena in amorphous oxide filmsReports on Progress in Physics, 1970
- A model for filament growth and switching in amorphous oxide filmsJournal of Non-Crystalline Solids, 1970
- Étude des propriétés électriques des structures Al-Al2O3–métalPhysica Status Solidi (b), 1969
- New conduction and reversible memory phenomena in thin insulating filmsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Impurity Conduction and Negative Resistance in Thin Oxide FilmsJournal of Applied Physics, 1964