Resonant Raman scattering and exciton localization in GaP:N and GaAsxP1−x:N
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 38 (1) , 230-233
- https://doi.org/10.1016/0022-2313(87)90113-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Optical dephasing and excitation transfer of an impurity-bound exciton in a semiconductor: Photon-echo experiments on GaP:NPhysical Review B, 1985
- Perturbed excitons bound to nitrogen in GaPJournal of Luminescence, 1985
- Local-environment effect on the nitrogen bound state inalloys: Experiments and coherent-potential approximation theoryPhysical Review B, 1980
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967