Perturbed excitons bound to nitrogen in GaP
- 31 August 1985
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 34 (1-2) , 83-88
- https://doi.org/10.1016/0022-2313(85)90097-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Periodicity in the undulation spectra of GaP: NPhysical Review B, 1982
- Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorPhysical Review B, 1982
- Decay kinetics of excitons and the electron-hole plasma in GaP: NPhysical Review B, 1980
- Thermal quenching processes in the low temperature photoluminescence of excitons bound to nitrogen pairs in GaPPhysical Review B, 1977
- Optical investigations of the undulation spectrum of GaP:N:ZnPhysical Review B, 1976
- Inter-impurity recombinations in semiconductorsProgress in Solid State Chemistry, 1973
- Undulation Spectra of GaP Associated with the Isoelectronic Trap NPhysical Review Letters, 1971
- Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaPPhysical Review B, 1969
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- Bound Excitons in GaPPhysical Review B, 1963