Inter-impurity recombinations in semiconductors
- 31 December 1973
- journal article
- Published by Elsevier in Progress in Solid State Chemistry
- Vol. 8, 1-126
- https://doi.org/10.1016/0079-6786(73)90004-6
Abstract
No abstract availableThis publication has 100 references indexed in Scilit:
- The temperature dependence of the linewidth of iron group ions in MgOSolid State Communications, 1972
- Photoluminescence of undoped GaxIn1−xP alloysPhysica Status Solidi (a), 1971
- Variable hue GaP diodesSolid-State Electronics, 1971
- MIS electroluminescent diodes in ZnTeSolid-State Electronics, 1970
- Energy Transfer from Donor–Acceptor Pairs to Deep‐Lying Impurity States in SemiconductorsPhysica Status Solidi (b), 1970
- Pair spectra in tetragonal zinc diphosphide (ZnP2) and cadmium diphosphide (CdP2) single crystalsPhysics Letters A, 1969
- Light emission from forward biased p-n junctions in gallium phosphideSolid-State Electronics, 1962
- Théorie des centres luminogènes du type donneur-accepteur associésJournal de Physique et le Radium, 1956
- The fluorescence of zinc sulphide activated with copperPhysica, 1949
- Über Ausleuchtung der Phosphoreszenz durch elektrische FelderThe European Physical Journal A, 1920