Energy Transfer from Donor–Acceptor Pairs to Deep‐Lying Impurity States in Semiconductors

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Abstract
After briefly reviewing the formulation of resonance energy transfer, we consider resonance transfer from effective mass electronic states of donor‐acceptor pairs to tightly‐bound electronic states of impurities in semiconductors. Two general cases requiring different theoretical analyses are considered: 1. transfer from the donor‐acceptor pair to a distant point fluorescer and 2. transfer from the pair to intra‐core fluorescer states of the donor or acceptor. The energy transfer matrices for both cases are shown to depend on the radiative transition matrix for the fluorescer. For case 1, the transfer matrix depends on the overlap of the effective mass function of donor and acceptor; for case 2 the main contribution arises from effective mass functions in the unit cell within which is the fluorescer core. The analyses are applied qualitatively to ZnS:Cu, Ga, Mn and to ZnS:Cu, Tb, and comparisons made with other transfer mechanisms. Finally, transfer involving intra‐donor transitions is predicted.