Photoluminescence of undoped GaxIn1−xP alloys
- 16 December 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 8 (2) , 437-441
- https://doi.org/10.1002/pssa.2210080211
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Thermoreflectance studies of thin epitaxially deposited (InGa)P alloysJournal of Physics C: Solid State Physics, 1971
- Electroluminescence in GaAsxP1−x, InxGa1−xP, and AlxGa1−xP Junctions with x≲0.01Journal of Applied Physics, 1971
- The cathodoluminescence of Ga∞In1-∞P alloysSolid State Communications, 1971
- Band Structure of InGaP from Pressure ExperimentsJournal of Applied Physics, 1970
- Electron mobilities and photoluminescence of solution grown indiumphosphide single crystalsJournal of Physics and Chemistry of Solids, 1970
- Photoluminescence of InPJournal of Luminescence, 1970
- Evidence for donor-acceptor recombination in InP by time-resolved photoluminiscence spectroscopySolid State Communications, 1969
- Méthode de synthése et de croissanceápartir de solution, de monocristaux homogénes de semiconducteursJournal of Crystal Growth, 1968
- Radiative Recombination in-Type InPPhysical Review B, 1967