Photoluminescence of InP
- 1 January 1970
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 1-2, 542-551
- https://doi.org/10.1016/0022-2313(70)90066-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effects of excitation intensity on the photoluminescence near the bandgap of n-InPSolid State Communications, 1969
- Evidence for donor-acceptor recombination in InP by time-resolved photoluminiscence spectroscopySolid State Communications, 1969
- Cathodoluminescence of n-Type GaAsJournal of Applied Physics, 1968
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMITApplied Physics Letters, 1968
- Radiative Recombination in-Type InPPhysical Review B, 1967
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964
- Exciton Absorption and Emission in InPPhysical Review B, 1964
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964