Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaP
- 15 December 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 188 (3) , 1228-1239
- https://doi.org/10.1103/physrev.188.1228
Abstract
Two sets of sharp emission lines, associated with the photoluminescence spectrum of the isoelectronic nitrogen trap in GaP, are unambiguously identified as the recombination of a second exciton bound to this center with an energy of 10 meV. This is the first observation of an excitonic molecule bound at a defect. The two electrons and two holes within this complex combine to form two antisymmetric states of angular momentum and . The state is split 0.16 meV by the cubic crystal field, and the state lies 0.17 meV above the center of gravity of this doublet. Transitions from these states to the and states of a single exciton bound to nitrogen are seen. The complex Zeeman splittings predicted by this model agree in detail with experiment. The excitonic molecule is stable at low temperature; at 1.5°K, the excitonic molecule emission lines increase as the square of the single exciton intensity with increase in pumping power. However, nonradiative Auger recombination reduces the over-all nitrogen emission by a factor of 3 below the intensity at 4.2°K. The binding energy of the second exciton at the nitrogen trap is nearly equal to that of the single exciton. This remarkable fact may be possible only for an isoelectronic trap.
Keywords
This publication has 18 references indexed in Scilit:
- Excitonic molecule bound to the isoelectronic trap nitrogen in gallium phosphideSolid State Communications, 1969
- Isoelectronic Oxygen Trap in ZnTePhysical Review B, 1968
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Interference between Intermediate States in the Optical Properties of Nitrogen-Doped Gallium PhosphidePhysical Review B, 1967
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965
- Bound Excitons in GaPPhysical Review B, 1963
- Zeeman Effect of Bound Excitons in Gallium PhosphidePhysical Review B, 1963