Excitonic molecule bound to the isoelectronic trap nitrogen in gallium phosphide
- 1 June 1969
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 7 (11) , 831-835
- https://doi.org/10.1016/0038-1098(69)90772-8
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Interference between Intermediate States in the Optical Properties of Nitrogen-Doped Gallium PhosphidePhysical Review B, 1967
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Experimental Observation of the Excitonic MoleculePhysical Review Letters, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- Bound Excitons in GaPPhysical Review B, 1963
- Zeeman Effect of Bound Excitons in Gallium PhosphidePhysical Review B, 1963
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956