Cascaded homojunction avalanche photodiodes
- 1 January 1988
- journal article
- research article
- Published by Taylor & Francis in Fiber and Integrated Optics
- Vol. 7 (1) , 1-15
- https://doi.org/10.1080/01468038808219347
Abstract
The structure and the performance of a cascaded avalanche photodiode (APD) based on cascaded home-junctions are discussed. Similar to the hetero-structure superlattice APD, such a device has a lower excess noise and a higher gain at lower bias voltages than conventional APDs. In addition to the ionization ratio, several parameters also affect the device's performance.Keywords
This publication has 17 references indexed in Scilit:
- Electron and hole impact ionization coefficients in (100) and in (111) SiJournal of Applied Physics, 1985
- Properties of GaAs/Al0.53Ga0.47As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1984
- Impact ionization of electrons in silicon (steady state)Journal of Applied Physics, 1983
- A model for impact ionisation in wide-gap semiconductorsJournal of Physics C: Solid State Physics, 1983
- Lucky-drift mechanism for impact ionisation in semiconductorsJournal of Physics C: Solid State Physics, 1983
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Statistics of a General Class of Avalanche Detectors With Applications to Optical CommunicationBell System Technical Journal, 1971
- New Results on Avalanche Multiplication Statistics with Applications to Optical DetectionBell System Technical Journal, 1971
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964