Dielectric function in HgSe at 2, 95, and 300 K
- 1 November 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 90 (1) , 157-166
- https://doi.org/10.1002/pssb.2220900117
Abstract
Reflectivity spectra of n‐HgSe with various carrier concentrations are measured in the spectral region 20 to 500 cm−1. Their main features are well explained by the theoretical dielectric function which is constructed as a sum of Γ8–Γ8 interband, intraband, and phonon contributions and is calculated using the available values of band parameters in the full Kane theory. The effect of the interband contribution on the plasmon–LO phonon coupling and on the frequency of LO phonon is discussed. Possible origins for the discrepancy between experimental and calculated spectra are also discussed.Keywords
This publication has 19 references indexed in Scilit:
- Far infrared studies of lattice and free carrier effects in Hg1-xMnxTeSolid State Communications, 1978
- Dielectric function inmixed crystalsPhysical Review B, 1976
- Far-infrared reflection spectra of HgSeSolid State Communications, 1975
- Temperature-dependent electrical properties of HgSePhysical Review B, 1974
- Dielectric function in HgTe between 8 and 300°KPhysical Review B, 1974
- Random-Phase-Approximation Dielectric Function of-Sn in the Far InfraredPhysical Review B, 1972
- Band Structure of HgSe: Band Parameter Determinations from Effective-Mass Data, and Concentration Dependence and Anisotropy of Beating Effects in the Shubnikov-de Haas OscillationsPhysical Review B, 1971
- Nonparabolic Conduction Band in HgSe and HgPhysical Review B, 1962
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Plasma Oscillations and Energy Loss of Charged Particles in SolidsProceedings of the Physical Society. Section A, 1955