Technology computer-aided design modelling of single-atom doping for fabrication of buried nanostructures
- 10 January 2003
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 14 (2) , 157-160
- https://doi.org/10.1088/0957-4484/14/2/311
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Reduction of Fluctuation in Semiconductor Conductivity by One-by-One Ion Implantation of Dopant AtomsJapanese Journal of Applied Physics, 2000
- A silicon-based nuclear spin quantum computerNature, 1998
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971