High mobility and high sheet electron density in selectively doped InAlAs/InGaAs heterostructures grown by MBE on GaAs
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 770-773
- https://doi.org/10.1016/0022-0248(93)90729-g
Abstract
No abstract availableKeywords
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