A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 818-823
- https://doi.org/10.1109/16.3331
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structuresJournal of Applied Physics, 1986
- Determination of the conduction-band discontinuity between In0.53Ga0.47As/In0.52Al0.48As using n+-InGaAs/InAlAs/n−-InGaAs capacitorsJournal of Applied Physics, 1986
- Delta-doped ohmic contacts to n-GaAsApplied Physics Letters, 1986
- Planar monolithic integrated photoreceiver for 1.3–1.55 μm wavelength applications using GaInAs-GaAs heteroepitaxiesApplied Physics Letters, 1986
- Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technologyIEEE Transactions on Electron Devices, 1986
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- Hot-electron velocity overshoot in Ga0.47In0.53AsApplied Physics Letters, 1984
- Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBEJournal of Vacuum Science and Technology, 1980
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974
- Crystal Interfaces. Part II. Finite OvergrowthsJournal of Applied Physics, 1963