Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures
- 15 November 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (10) , 3495-3498
- https://doi.org/10.1063/1.337600
Abstract
Secondary‐ion‐mass spectrometry, Hall‐effect measurements, and dc I‐V characteristics of 1‐μm Ga0.47In0.53As‐Al0.48In0.52As high‐electron mobility transistor structures indicate that significant diffusion of Si can occur in these layers. The source of the Si is both the intentional Si used for modulation doping of the devices, and Si which is an unintentional impurity in the Fe‐doped InP substrates on which the layer is grown. Preannealing and polishing the substrates can lessen the effect.This publication has 7 references indexed in Scilit:
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