The mechanical stress deriving from molecular fitting: On the Si-SiO2 interface and its effect upon the development and distribution of vacancies
- 1 February 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 79 (2) , K89-K93
- https://doi.org/10.1002/pssb.2220790247
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Surface charges induced by mechanical stresses in the silicon-silicon oxide interfaceSolid-State Electronics, 1971
- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966
- The interaction of vacancies with dislocationsPhilosophical Magazine, 1962
- Dislocation Theory of Yielding and Strain Ageing of IronProceedings of the Physical Society. Section A, 1949