Multiphonon resonance Raman scattering and spatial distribution of electrons and holes

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Abstract
The cross section sigma N of multiphonon resonance Raman scattering in polar semiconductors that arises from a process involving free (unbonded by Coulomb interaction) electron-hole pairs is calculated for the case where the number of emitted longitudinal optical phonons NN approximately alpha 3, where alpha is the Frohlich electron-phonon coupling constant. The relation between sigma N and an electron-hole distance function is found. The dependence sigma N approximately alpha 3 arises from the fact that, after having emitted an arbitrary number of longitudinal optical phonons, the electron-hole pair occupies a finite volume that is proportional to alpha -3.

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