Resonant Raman Effect in Semiconductors
- 15 December 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 188 (3) , 1285-1290
- https://doi.org/10.1103/PhysRev.188.1285
Abstract
Light scattering experiments on semiconductors are discussed in which the energy of the incident photon from the laser or that of the Raman-scattered photon is nearly coincident with that of an electronic transition in the scatterer. Experimental data on ZnTe, CdS, InAs, ZnSe, and GaP are analyzed, and a discussion of LO-overtone scattering mechanisms is presented. Some additional experiments are proposed and discussed.Keywords
This publication has 13 references indexed in Scilit:
- Resonant Raman Scattering from LO Phonons in Polar SemiconductorsPhysical Review B, 1969
- Resonant Raman effect in the indirect gap semiconductor gallium phosphideSolid State Communications, 1969
- Multiple-Phonon-Resonance Raman Effect in CdSPhysical Review Letters, 1969
- Multiple-Phonon Resonant Raman Scattering in CdSPhysical Review Letters, 1969
- Resonant Surface Raman Scattering in Direct-Gap SemiconductorsPhysical Review Letters, 1969
- Spin-Flip Raman Scattering in Cadmium SulfidePhysical Review B, 1968
- Raman Scattering from InSb Surfaces at Photon Energies Near theEnergy GapPhysical Review Letters, 1968
- Theory of Lattice Raman Scattering in InsulatorsPhysical Review B, 1967
- Enhancement of Raman Cross Section in CdS due to Resonant AbsorptionPhysical Review Letters, 1966
- The Raman effect in crystalsAdvances in Physics, 1964