Resonant Raman effect in the indirect gap semiconductor gallium phosphide
- 1 July 1969
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 7 (13) , 953-955
- https://doi.org/10.1016/0038-1098(69)90550-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Multiple-Phonon-Resonance Raman Effect in CdSPhysical Review Letters, 1969
- Multiple-Phonon Resonant Raman Scattering in CdSPhysical Review Letters, 1969
- Resonant Surface Raman Scattering in Direct-Gap SemiconductorsPhysical Review Letters, 1969
- Raman Scattering from InSb Surfaces at Photon Energies Near theEnergy GapPhysical Review Letters, 1968
- EFFICIENT CW LASER OSCILLATION AT 4416 Å IN Cd (II)Applied Physics Letters, 1968
- Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eVJournal of Applied Physics, 1967
- Lattice Dynamics of Wurtzite: CdSPhysical Review B, 1967
- Enhancement of Raman Cross Section in CdS due to Resonant AbsorptionPhysical Review Letters, 1966
- Theory of the resonance Raman effect in crystalsJournal de Physique, 1965
- The Raman effect in crystalsAdvances in Physics, 1964