Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons

Abstract
By using keV electron yields induced by 60-MeV S7+ in GaP and InP crystal targets, we have carried out high sensitivity measurements of the preferential collision effect which is known to occur when the incident direction of the ions is slightly off from the axis of zincblende lattice. The results demonstrate the quick and simple determination of the crystallographic polarity of zincblende structure crystals using this method.