An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films
- 1 May 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (5) , 229-231
- https://doi.org/10.1109/55.761023
Abstract
An array of metal-ferroelectric-semiconductor field effect transistors (MFSFETs) is fabricated on a silicon-on-insulator (SOI) structure using SrBi/sub 2/Ta/sub 2/O/sub 9/ as the gate insulator. It is demonstrated that each FET shows good characteristics as a nonvolatile analog memory due to partial polarization of the SrBi/sub 2/Ta/sub 2/O/sub 9/ film and that the array operates as an electrically modifiable synapse circuit for carrying out the weighted sum operation in an artificial neural network.Keywords
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