Growth and characterisation of ZnTe and ZnTeCdTe superlattices on GaAs substrates
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 726-731
- https://doi.org/10.1016/0022-0248(88)90611-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Molecular beam epitaxial growth and characterization of ZnTe and CdTe on (001) GaAsJournal of Crystal Growth, 1988
- OMVPE growth of CdTe-ZnTe superlatticesJournal of Crystal Growth, 1988
- Superlattices of II–VI semiconductorsJournal of Crystal Growth, 1987
- MOCVD growth of CdTe-ZnTe superlatticesMaterials Letters, 1987
- Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTeApplied Physics Letters, 1986
- Superlattices: Progress and prospectsJournal of Vacuum Science & Technology A, 1986
- Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe-ZnTeApplied Physics Letters, 1986
- Structural properties of epitaxial layers of CdTe, ZnCdTe and HgCdTeThin Solid Films, 1985
- Effects influencing the structural integrity of semiconductors and their alloysJournal of Vacuum Science & Technology A, 1985
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984