MOCVD growth of CdTe-ZnTe superlattices
- 31 August 1987
- journal article
- Published by Elsevier in Materials Letters
- Vol. 5 (9) , 345-349
- https://doi.org/10.1016/0167-577x(87)90124-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTeApplied Physics Letters, 1986
- Photoluminescence studies of ZnTe-CdTe strained-layer superlatticesApplied Physics Letters, 1986
- Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperatureApplied Physics A, 1985
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984
- Some aspects of the X-ray structural characterization of (Ga1−xAlxAs)n1(GaAs)n2/GaAs(001) superlatticesJournal of Applied Crystallography, 1984
- Growth conditions and characterization of InGaAs/GaAs strained layers superlatticesJournal of Applied Physics, 1984
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975