Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperature
- 1 October 1985
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 38 (2) , 97-102
- https://doi.org/10.1007/bf00620459
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperatureElectronics Letters, 1985
- Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wellsApplied Physics Letters, 1985
- Optical investigation of modulation-doped In0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructuresApplied Physics Letters, 1985
- InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxyElectronics Letters, 1984
- Optical properties of GaInAs/AlInAs single quantum wellsApplied Physics Letters, 1983
- Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor depositionJournal of Applied Physics, 1983
- 1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1983
- Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As multiquantum-well LEDs emitting at 1.6 μmElectronics Letters, 1983
- Near-band gap absorption and photoluminescence of In0.53Ga0.47As semiconductor alloyJournal of Applied Physics, 1981
- X-ray diffraction from one-dimensional superlattices in GaAs1−xPxcrystalsJournal of Applied Crystallography, 1973