Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon
- 15 July 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (2) , 716-724
- https://doi.org/10.1063/1.373727
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperatureApplied Physics Letters, 1998
- Survey of material options and issues for thin film silicon solar cellsProgress In Photovoltaics, 1998
- Excimer-Laser-Induced Lateral-Growth of Silicon Thin-FilmsJapanese Journal of Applied Physics, 1998
- Towards high-efficiency thin-film silicon solar cells with the “micromorph” conceptSolar Energy Materials and Solar Cells, 1997
- Solid-phase crystallized Si films on glass substrates for thin film solar cellsSolar Energy Materials and Solar Cells, 1997
- Polycrystalline silicon thin-film transistors: A continuous evolving technologyThin Solid Films, 1997
- High-quality polycrystalline silicon thin film prepared by a solid phase crystallization methodJournal of Non-Crystalline Solids, 1996
- Thin-film silicon solar cells: A review and selected trendsSolar Energy Materials and Solar Cells, 1995
- Interaction of aluminum with hydrogenated amorphous silicon at low temperaturesJournal of Applied Physics, 1994
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972