Characterization of InGaAsP surface corrugation used for distributed feedback lasers by means of Raman spectroscopy
- 11 August 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (6) , 325-327
- https://doi.org/10.1063/1.97156
Abstract
Thermally deformed surface corrugations on both an InP substrate and an InGaAsP layer have been analyzed by means of x-ray photoelectron spectroscopy and laser Raman spectroscopy. From the spectra of the deformed surface corrugations on an InP substrate on which a GaAs wafer was placed during its heat treatment, it has been found that material formed in the grooves is an InGaAsP alloy single crystal.Keywords
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