A quenched-in defect in boron-doped silicon
- 1 November 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (11) , 4821-4822
- https://doi.org/10.1063/1.323505
Abstract
We observed a majority-carrier trapping level at Ev+0.45 eV in boron-doped silicon with a wide range of resistivities after being quenched from 900 to 1200 °C. The carrier capture cross section was measured to be 4×10−18 cm2. The activation energy for migration and defect formation energy were found to be 0.76±0.05 and 2.8±04 eV, respectively, consistent with that of the interstitial iron in silicon. However, we found a marked boron dependence, indicating that the nature of the defect processes may be complex.This publication has 5 references indexed in Scilit:
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- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957