Damage Profiles after 50 to 500 MeV Ion Implantation as Deduced from Thyristor Leakage Currents
- 16 May 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (1) , 347-351
- https://doi.org/10.1002/pssa.2210890136
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High Sensitivity Non-Destructive Profiling of Radiation Induced Damage in MOS StructuresIEEE Transactions on Nuclear Science, 1979
- Determination of the semiconductor doping profile right up to its surface using the MIS capacitorSolid-State Electronics, 1975