Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells
- 30 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (13) , 821-823
- https://doi.org/10.1063/1.98055
Abstract
Subpicosecond time-resolved absorption spectra have revealed carrier lifetimes as short as 10 ps in low-temperature GaAs/AlGaAs multiple quantum well structures (MQWS’s) due to the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW’s. Time-resolved detection of the edge-emitted luminescence with a streak camera fully confirms the occurrence of a fast radiative recombination associated with substantial light amplification.Keywords
This publication has 12 references indexed in Scilit:
- Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon arrayApplied Physics Letters, 1986
- Hot-Electron Relaxation in GaAs Quantum WellsPhysical Review Letters, 1985
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Hot photoluminescence of GaAs-AlGaAs multiple quantum well structures under high excitation by a single shot of 30 ps, 532 nm laserSolid State Communications, 1985
- Fast nonlinear optical response from proton-bombarded multiple quantum well structuresApplied Physics Letters, 1985
- Femtosecond spectroscopy with high-power tunable optical pulsesJournal of the Optical Society of America B, 1985
- On the scattering of electrons by polar optical phonons in quasi-2D quantum wellsJournal of Physics C: Solid State Physics, 1983
- Recombination Enhancement due to Carrier Localization in Quantum Well StructuresPhysical Review Letters, 1983
- Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structuresSolid State Communications, 1983
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980