Electronic States In Glow-Discharge a-SiGex:H:(F) Alloys
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1R) , 49-52
- https://doi.org/10.1143/jjap.25.49
Abstract
Amorphous SiGe x films with low spin densities and high photoconductivity were prepared by the glow discharge of a gaseous mixture of SiF4-GeF4-H2. The transport properties of a-SiGe x :H:(F) were investigated by the time-of-flight method. The electron transport was found to be non-dispersive at room temperature with a drift mobility of 0.2-0.3 cm2/ Vs, while the transient hole current consisted of a fast non-dispersive process and slow emission from deep states. The non-dispersive hole transport may be due to narrow tail states of the valence band. The nature of the deep defect states in a-SiGe x :H:(F) is disscussed in terms of a defect type consisting of twofold-coordinated Ge.Keywords
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