Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (2) , 160-164
- https://doi.org/10.1109/jqe.1980.1070436
Abstract
No abstract availableKeywords
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