GaxIn1−xAsyP1−y/InP rib-waveguide injection lasers made by one-step LPE

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Abstract
A new fabrication method and characteristics of a rib‐guide GaInAsP/InP DH laser are described. The active layer of the rib‐guide structure is grown directly on a grooved InP substrate by one‐step liquid phase epitaxy in which phosphorus vapor is introduced in order to prevent the decomposition of the substrate. Stable transverse‐mode operation is obtained reproducibly up to 1.5 times threshold current. A preliminary life test indicates that the rib‐guide lasers fabricated without a buffer layer should be as reliable as conventional lasers with a buffer layer.