Defect distribution near the surface of electron-irradiated silicon
- 15 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (6) , 547-548
- https://doi.org/10.1063/1.90440
Abstract
The surface‐defect distributions of electron‐irradiated n‐type silicon has been investigated using a transient capacitance technique. Schottky, p‐n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center’s distribution. The vacancy diffusion length at 300 °K was estimated to be about 3–6 μm.Keywords
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