ELECTRON PARAMAGNETIC RESONANCE OF ION-IMPLANTED DONORS IN SILICON

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Abstract
The EPR of As75, Sb121, and Sb123 substitutional donors implanted in silicon have been observed. The Si‐P3 and Si‐P1 center resonances associated with the damage were also observed. Samples were implanted at room temperature to fluences of ∼ 1013 ions/cm2, and the EPR spectra associated with the damage and the implanted impurities were monitored as the samples were isochronally annealed to 970 °C. The spectra of the implanted donors were observed after the 400 °C anneal with illumination and following the 600 °C anneal without illumination. After the anneal at ∼ 900 °C, the proportion of implanted antimony that is observed by EPR to be substitutional is significantly larger than for the implanted arsenic.