ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICON

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Abstract
Electron paramagnetic resonance spectra of radiation damage centers in silicon have been observed following implantation with nitrogen and phosphorous ions. Two of these spectra have narrow lines and can be fitted to anisotropic g‐tensors and zero field splitting tensors. One is a new spectrum with approximately [111] axial symmetry and will be called the Si‐B2 spectrum. The other can be identified as the Si‐P3 spectrum which has been known previously to result from neutron irradiation. Both spectra are attributed to defects in the crystal containing broken silicon bonds.