The asymptotes of the base current in bipolar devices
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (11) , 1902-1908
- https://doi.org/10.1109/16.7403
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Modelling of minority-carrier transport in heavily doped silicon emittersSolid-State Electronics, 1987
- Toward a systematic design theory for silicon solar cells using optimization techniquesSolar Cells, 1986
- Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped siliconIEEE Transactions on Electron Devices, 1986
- Experimental study of the minority-carrier transport at the polysilicon—monosilicon interfaceIEEE Transactions on Electron Devices, 1985
- Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Measuring and modeling minority carrier transport in heavily doped siliconSolid-State Electronics, 1985
- Integral-equation solution of minority-carrier transport problems in heavily doped semiconductorsIEEE Transactions on Electron Devices, 1984
- Measurements of the p-n product in heavily doped epitaxial emittersIEEE Transactions on Electron Devices, 1984
- A method for determining energy gap narrowing in highly doped semiconductorsIEEE Transactions on Electron Devices, 1982
- Effect of emitter contact on current gain of silicon bipolar devicesIEEE Transactions on Electron Devices, 1980