Modelling of minority-carrier transport in heavily doped silicon emitters
- 30 November 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (11) , 1127-1136
- https://doi.org/10.1016/0038-1101(87)90077-3
Abstract
No abstract availableKeywords
This publication has 49 references indexed in Scilit:
- Silicon point contact concentrator solar cellsIEEE Electron Device Letters, 1985
- Measuring and modeling minority carrier transport in heavily doped siliconSolid-State Electronics, 1985
- Metal—insulator transition in doped siliconPhilosophical Magazine Part B, 1983
- A comparison of semiconductor devices for high-speed logicProceedings of the IEEE, 1982
- Charge neutrality in heavily doped emittersApplied Physics Letters, 1981
- Metal non-metal transition in phosphorus-doped siliconPhilosophical Magazine Part B, 1980
- Effect of emitter contact on current gain of silicon bipolar devicesIEEE Transactions on Electron Devices, 1980
- Heavy doping effects in p-n-p bipolar transistorsIEEE Transactions on Electron Devices, 1980
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976