Pulse switching characterization of organometallic chemical vapor deposited PbZrxTi1−xO3 thin films for high-density memory applications
- 1 February 1995
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 7 (1-4) , 123-138
- https://doi.org/10.1080/10584589508220226
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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